IRFH8330TRPBF
MOSFET N-CH 30V 17A/56A PQFN
IRFH8330TRPBF Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
30 V
Package / Case：
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs：
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
1450 pF @ 25 V
Supplier Device Package：
PQFN (5x6)
Vgs(th) (Max) @ Id：
2.35V @ 25µA
Rds On (Max) @ Id, Vgs：
6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C：
17A (Ta), 56A (Tc)
Power Dissipation (Max)：
3.3W (Ta), 35W (Tc)
