IRFH5220TRPBF
MOSFET N-CH 200V 3.8A/20A PQFN
IRFH5220TRPBF Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs：
30 nC @ 10 V
Drain to Source Voltage (Vdss)：
200 V
Vgs(th) (Max) @ Id：
5V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds：
1380 pF @ 50 V
Power Dissipation (Max)：
3.6W (Ta), 8.3W (Tc)
Supplier Device Package：
PQFN (5x6)
Package / Case：
8-VQFN Exposed Pad
Current - Continuous Drain (Id) @ 25°C：
3.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs：
99.9mOhm @ 5.8A, 10V
