IRFH5215TRPBF
MOSFET N-CH 150V 5A/27A PQFN
IRFH5215TRPBF Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
150 V
Vgs(th) (Max) @ Id：
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：
32 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
5A (Ta), 27A (Tc)
Supplier Device Package：
PQFN (5x6)
Package / Case：
8-VQFN Exposed Pad
Power Dissipation (Max)：
3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs：
58mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
1350 pF @ 50 V
