IRF840LPBF
MOSFET N-CH 500V 8A TO263AB
IRF840LPBF Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds：
1300 pF @ 25 V
Vgs(th) (Max) @ Id：
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
63 nC @ 10 V
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)：
125W (Tc)
Drain to Source Voltage (Vdss)：
500 V
Current - Continuous Drain (Id) @ 25°C：
8A (Tc)
Rds On (Max) @ Id, Vgs：
850mOhm @ 4.8A, 10V
