AOI4S60
MOSFET N-CH 600V 4A TO251A
AOI4S60 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Drain to Source Voltage (Vdss)：
600 V
Current - Continuous Drain (Id) @ 25°C：
4A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
6 nC @ 10 V
Supplier Device Package：
TO-251A
Package / Case：
TO-251-3 Stub Leads, IPAK
Vgs(th) (Max) @ Id：
4.1V @ 250µA
Power Dissipation (Max)：
56.8W (Tc)
Rds On (Max) @ Id, Vgs：
900mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
263 pF @ 100 V
